150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R(on,sp)) of a 150 and 200 V SGT power MOSFET, we used a multiple...

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Detalles Bibliográficos
Autores principales: Chien, Feng-Tso, Wang, Zhi-Zhe, Lin, Cheng-Li, Kang, Tsung-Kuei, Chen, Chii-Wen, Chiu, Hsien-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281022/
https://www.ncbi.nlm.nih.gov/pubmed/32429285
http://dx.doi.org/10.3390/mi11050504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7281022/
https://www.ncbi.nlm.nih.gov/pubmed/32429285
http://dx.doi.org/10.3390/mi11050504

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