Al(x)In(1−x)N on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

We investigate the photovoltaic performance of solar cells based on n-Al(x)In(1−x)N (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The Al(x)In(1−x)N layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This...

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Detalles Bibliográficos
Autores principales: Valdueza-Felip, Sirona, Blasco, Rodrigo, Olea, Javier, Díaz-Lobo, Alba, Braña, Alejandro F., Naranjo, Fernando B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287894/
https://www.ncbi.nlm.nih.gov/pubmed/32438685
http://dx.doi.org/10.3390/ma13102336

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287894/
https://www.ncbi.nlm.nih.gov/pubmed/32438685
http://dx.doi.org/10.3390/ma13102336

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