Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices

NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits in checking the excessive increase in errors,...

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Detalles Bibliográficos
Autores principales: Lim, Seung-Ho, Park, Ki-Woong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287968/
https://www.ncbi.nlm.nih.gov/pubmed/32456045
http://dx.doi.org/10.3390/s20102952

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287968/
https://www.ncbi.nlm.nih.gov/pubmed/32456045
http://dx.doi.org/10.3390/s20102952

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