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Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits in checking the excessive increase in errors,...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287968/ https://www.ncbi.nlm.nih.gov/pubmed/32456045 http://dx.doi.org/10.3390/s20102952 |