InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The...

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Detalles Bibliográficos
Autores principales: Zhukov, Alexey E., Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Dragunova, Anna S., Tang, Mingchu, Chen, Siming, Liu, Huiyun, Kulagina, Marina M., Kadinskaya, Svetlana A., Zubov, Fedor I., Mozharov, Alexey M., Maximov, Mikhail V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287998/
https://www.ncbi.nlm.nih.gov/pubmed/32443456
http://dx.doi.org/10.3390/ma13102315

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287998/
https://www.ncbi.nlm.nih.gov/pubmed/32443456
http://dx.doi.org/10.3390/ma13102315

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