Cargando…

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhukov, Alexey E., Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Dragunova, Anna S., Tang, Mingchu, Chen, Siming, Liu, Huiyun, Kulagina, Marina M., Kadinskaya, Svetlana A., Zubov, Fedor I., Mozharov, Alexey M., Maximov, Mikhail V.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287998/ https://www.ncbi.nlm.nih.gov/pubmed/32443456 http://dx.doi.org/10.3390/ma13102315

Ejemplares similares

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
por: Makhov, Ivan, et al.
Publicado: (2023)

Quantum-dot microlasers based on whispering gallery mode resonators
por: Zhukov, A. E., et al.
Publicado: (2021)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
por: Rakhlin, Maxim, et al.
Publicado: (2022)

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
por: Xu, Buqing, et al.
Publicado: (2022)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
por: Petrushkov, Mikhail O., et al.
Publicado: (2022)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
por: Haas, Fabian, et al.
Publicado: (2016)

Quantitative strain analysis of InAs/GaAs quantum dot materials
por: Vullum, Per Erik, et al.
Publicado: (2017)

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation
por: Hu, Xian, et al.
Publicado: (2020)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Characteristics and performance of monolithic GaAs preamplifiers for the LAr Barrel calorimeter
por: Camin, D V, et al.
Publicado: (1994)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
por: Paladugu, M, et al.
Publicado: (2009)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation
por: Hussain, Sajid, et al.
Publicado: (2016)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
por: Chebotarev, Sergei N, et al.
Publicado: (2017)

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition
por: Pashchenko, Alexander S, et al.
Publicado: (2018)

Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires
por: Gómez, Víctor J., et al.
Publicado: (2022)

Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
por: Ruiz, Nazaret, et al.
Publicado: (2022)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Intracellular microlasers
por: Humar, Matjaž, et al.
Publicado: (2015)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
por: Dvoretckaia, Liliia, et al.
Publicado: (2022)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
por: Souaf, Manel, et al.
Publicado: (2015)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
por: Wang, Lu, et al.
Publicado: (2009)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate
por: Konishi, T., et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_o7v4fh9clg0q7tpus5brggc6mc