Non-thermal resistive switching in Mott insulator nanowires

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field...

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Detalles Bibliográficos
Autores principales: Kalcheim, Yoav, Camjayi, Alberto, del Valle, Javier, Salev, Pavel, Rozenberg, Marcelo, Schuller, Ivan K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7293290/
https://www.ncbi.nlm.nih.gov/pubmed/32532988
http://dx.doi.org/10.1038/s41467-020-16752-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7293290/
https://www.ncbi.nlm.nih.gov/pubmed/32532988
http://dx.doi.org/10.1038/s41467-020-16752-1

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