Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that bene...

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Detalles Bibliográficos
Autores principales: Yang, Feng-Shou, Li, Mengjiao, Lee, Mu-Pai, Ho, I-Ying, Chen, Jiann-Yeu, Ling, Haifeng, Li, Yuanzhe, Chang, Jen-Kuei, Yang, Shih-Hsien, Chang, Yuan-Ming, Lee, Ko-Chun, Chou, Yi-Chia, Ho, Ching-Hwa, Li, Wenwu, Lien, Chen-Hsin, Lin, Yen-Fu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7293344/
https://www.ncbi.nlm.nih.gov/pubmed/32532980
http://dx.doi.org/10.1038/s41467-020-16766-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7293344/
https://www.ncbi.nlm.nih.gov/pubmed/32532980
http://dx.doi.org/10.1038/s41467-020-16766-9

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