Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport...

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Detalles Bibliográficos
Autores principales: Fan, Linjie, Bi, Jinshun, Xi, Kai, Majumdar, Sandip, Li, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7294431/
https://www.ncbi.nlm.nih.gov/pubmed/32408540
http://dx.doi.org/10.3390/s20102751

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7294431/
https://www.ncbi.nlm.nih.gov/pubmed/32408540
http://dx.doi.org/10.3390/s20102751

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