Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced b...

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Detalles Bibliográficos
Autores principales: Zhang, Maolin, Guo, Yufeng, Zhang, Jun, Yao, Jiafei, Chen, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7295927/
https://www.ncbi.nlm.nih.gov/pubmed/32542513
http://dx.doi.org/10.1186/s11671-020-03360-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7295927/
https://www.ncbi.nlm.nih.gov/pubmed/32542513
http://dx.doi.org/10.1186/s11671-020-03360-7

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