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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced b...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7295927/ https://www.ncbi.nlm.nih.gov/pubmed/32542513 http://dx.doi.org/10.1186/s11671-020-03360-7 |