Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices, abnormal carrier confinement behaviour has been observed for c-plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-...

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Detalles Bibliográficos
Autores principales: Chen, Li, Lin, Wei, Wang, Huiqiong, Li, Jinchai, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7299972/
https://www.ncbi.nlm.nih.gov/pubmed/32577220
http://dx.doi.org/10.1038/s41377-020-00342-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7299972/
https://www.ncbi.nlm.nih.gov/pubmed/32577220
http://dx.doi.org/10.1038/s41377-020-00342-3

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