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Nonpolar (112̅0) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon

[Image: see text] This article reports a nonpolar GaN metal–semiconductor–metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal q...

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Detalles Bibliográficos
Autores principales: Cai, Yuefei, Shen, Shuoheng, Zhu, Chenqi, Zhao, Xuanming, Bai, Jie, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7304820/
https://www.ncbi.nlm.nih.gov/pubmed/32374591
http://dx.doi.org/10.1021/acsami.0c04890