Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OE(max)(.)) of opt...

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Detalles Bibliográficos
Autores principales: Han, Chang-Fu, Chiou, Jiun-Ming, Lin, Jen-Fin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7308853/
https://www.ncbi.nlm.nih.gov/pubmed/32481739
http://dx.doi.org/10.3390/s20113062

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7308853/
https://www.ncbi.nlm.nih.gov/pubmed/32481739
http://dx.doi.org/10.3390/s20113062

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