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Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations
The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OE(max)(.)) of opt...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7308853/ https://www.ncbi.nlm.nih.gov/pubmed/32481739 http://dx.doi.org/10.3390/s20113062 |