Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Traditional ferroelectric devices suffer a lack of scalability. Doped HfO(2) thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-thick a...

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Detalles Bibliográficos
Autores principales: Peng, Yue, Han, Genquan, Liu, Fenning, Xiao, Wenwu, Liu, Yan, Zhong, Ni, Duan, Chungang, Feng, Ze, Dong, Hong, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7310056/
https://www.ncbi.nlm.nih.gov/pubmed/32572644
http://dx.doi.org/10.1186/s11671-020-03364-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7310056/
https://www.ncbi.nlm.nih.gov/pubmed/32572644
http://dx.doi.org/10.1186/s11671-020-03364-3

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