Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study

We analyze the ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-field simulations by self-consistently solving time-dependent Ginzburg Landau equation, Poisson’s equation and semicon...

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Detalles Bibliográficos
Autores principales: Saha, Atanu K., Gupta, Sumeet K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311392/
https://www.ncbi.nlm.nih.gov/pubmed/32576840
http://dx.doi.org/10.1038/s41598-020-66313-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7311392/
https://www.ncbi.nlm.nih.gov/pubmed/32576840
http://dx.doi.org/10.1038/s41598-020-66313-1

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