Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up...

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Detalles Bibliográficos
Autores principales: Dong, Yifan, Chen, Mengyu, Yiu, Wai Kin, Zhu, Qiang, Zhou, Guodong, Kershaw, Stephen V., Ke, Ning, Wong, Ching Ping, Rogach, Andrey L., Zhao, Ni
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7312319/
https://www.ncbi.nlm.nih.gov/pubmed/32596115
http://dx.doi.org/10.1002/advs.202000068

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7312319/
https://www.ncbi.nlm.nih.gov/pubmed/32596115
http://dx.doi.org/10.1002/advs.202000068

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