Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and Si(x)Ge(1–x) Alloys in Nanowires by Raman Spectroscopy

[Image: see text] Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e., high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase Si(x)Ge(1–x) nanostructures...

Descripción completa

Detalles Bibliográficos
Autores principales: de Matteis, Diego, De Luca, Marta, Fadaly, Elham M. T., Verheijen, Marcel A., López-Suárez, Miquel, Rurali, Riccardo, Bakkers, Erik P. A. M., Zardo, Ilaria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7315630/
https://www.ncbi.nlm.nih.gov/pubmed/32392038
http://dx.doi.org/10.1021/acsnano.0c00762

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7315630/
https://www.ncbi.nlm.nih.gov/pubmed/32392038
http://dx.doi.org/10.1021/acsnano.0c00762

Ejemplares similares