Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si(1−x)C(x):H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. T...

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Detalles Bibliográficos
Autores principales: Vivaldo, Israel, Ambrosio, Roberto C., López, Roberto, Flores-Méndez, Javier, Sánchez-Gaspariano, Luis A., Moreno, Mario, Candia, Filiberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7321575/
https://www.ncbi.nlm.nih.gov/pubmed/32531932
http://dx.doi.org/10.3390/ma13112643

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7321575/
https://www.ncbi.nlm.nih.gov/pubmed/32531932
http://dx.doi.org/10.3390/ma13112643

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