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Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si(1−x)C(x):H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. T...

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Detalles Bibliográficos
Autores principales:	Vivaldo, Israel, Ambrosio, Roberto C., López, Roberto, Flores-Méndez, Javier, Sánchez-Gaspariano, Luis A., Moreno, Mario, Candia, Filiberto
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7321575/ https://www.ncbi.nlm.nih.gov/pubmed/32531932 http://dx.doi.org/10.3390/ma13112643

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