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New Power MOSFET with Beyond-1D-Limit R(SP)-BV Trade-Off and Superior Reverse Recovery Characteristics
The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (R(SP)) and breakdown voltage (BV). In this paper, a new power MOSFET arch...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7321588/ https://www.ncbi.nlm.nih.gov/pubmed/32516987 http://dx.doi.org/10.3390/ma13112581 |