Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofi...

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Detalles Bibliográficos
Autores principales: Zhao, Yiqun, Tang, Libin, Yang, Shengyi, Lau, Shu Ping, Teng, Kar Seng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324452/
https://www.ncbi.nlm.nih.gov/pubmed/32601898
http://dx.doi.org/10.1186/s11671-020-03336-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324452/
https://www.ncbi.nlm.nih.gov/pubmed/32601898
http://dx.doi.org/10.1186/s11671-020-03336-7

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