Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofi...

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Autores principales: Zhao, Yiqun, Tang, Libin, Yang, Shengyi, Lau, Shu Ping, Teng, Kar Seng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324452/
https://www.ncbi.nlm.nih.gov/pubmed/32601898
http://dx.doi.org/10.1186/s11671-020-03336-7
_version_ 1783551945466707968
author Zhao, Yiqun
Tang, Libin
Yang, Shengyi
Lau, Shu Ping
Teng, Kar Seng
author_facet Zhao, Yiqun
Tang, Libin
Yang, Shengyi
Lau, Shu Ping
Teng, Kar Seng
author_sort Zhao, Yiqun
collection PubMed
description GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10(11) Jones at 850 nm light irradiation at room temperature was demonstrated.
format Online
Article
Text
id pubmed-7324452
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-73244522020-07-07 Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction Zhao, Yiqun Tang, Libin Yang, Shengyi Lau, Shu Ping Teng, Kar Seng Nanoscale Res Lett Nano Express GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10(11) Jones at 850 nm light irradiation at room temperature was demonstrated. Springer US 2020-06-29 /pmc/articles/PMC7324452/ /pubmed/32601898 http://dx.doi.org/10.1186/s11671-020-03336-7 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Zhao, Yiqun
Tang, Libin
Yang, Shengyi
Lau, Shu Ping
Teng, Kar Seng
Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_fullStr Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full_unstemmed Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_short Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_sort infrared photovoltaic detector based on p-gete/n-si heterojunction
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324452/
https://www.ncbi.nlm.nih.gov/pubmed/32601898
http://dx.doi.org/10.1186/s11671-020-03336-7
work_keys_str_mv AT zhaoyiqun infraredphotovoltaicdetectorbasedonpgetensiheterojunction
AT tanglibin infraredphotovoltaicdetectorbasedonpgetensiheterojunction
AT yangshengyi infraredphotovoltaicdetectorbasedonpgetensiheterojunction
AT laushuping infraredphotovoltaicdetectorbasedonpgetensiheterojunction
AT tengkarseng infraredphotovoltaicdetectorbasedonpgetensiheterojunction

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