Impact ionization and intervalley electron scattering in InSb and InAs induced by a single terahertz pulse

Electronic properties of InSb and InAs are sensitive to electric field due to their narrow forbidden energy gaps and big difference in effective masses of electrons in different conduction band valleys. Here we report impact ionization processes and redistribution of electrons between the Γ, L and X...

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Detalles Bibliográficos
Autores principales: Ašmontas, Steponas, Bumelienė, Skaidra, Gradauskas, Jonas, Raguotis, Romas, Sužiedėlis, Algirdas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324565/
https://www.ncbi.nlm.nih.gov/pubmed/32601406
http://dx.doi.org/10.1038/s41598-020-67541-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324565/
https://www.ncbi.nlm.nih.gov/pubmed/32601406
http://dx.doi.org/10.1038/s41598-020-67541-1

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