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Impact ionization and intervalley electron scattering in InSb and InAs induced by a single terahertz pulse
Electronic properties of InSb and InAs are sensitive to electric field due to their narrow forbidden energy gaps and big difference in effective masses of electrons in different conduction band valleys. Here we report impact ionization processes and redistribution of electrons between the Γ, L and X...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7324565/ https://www.ncbi.nlm.nih.gov/pubmed/32601406 http://dx.doi.org/10.1038/s41598-020-67541-1 |