Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO(3)

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapi...

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Detalles Bibliográficos
Autores principales: Oshime, Norihiro, Kano, Jun, Ikenaga, Eiji, Yasui, Shintaro, Hamasaki, Yosuke, Yasuhara, Sou, Hinokuma, Satoshi, Ikeda, Naoshi, Janolin, Pierre-Eymeric, Kiat, Jean-Michel, Itoh, Mitsuru, Yokoya, Takayoshi, Fujii, Tatsuo, Yasui, Akira, Osawa, Hitoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7329818/
https://www.ncbi.nlm.nih.gov/pubmed/32612212
http://dx.doi.org/10.1038/s41598-020-67651-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7329818/
https://www.ncbi.nlm.nih.gov/pubmed/32612212
http://dx.doi.org/10.1038/s41598-020-67651-w

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