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Layer-Dependent Electronic Structure Changes in Transition Metal Dichalcogenides: The Microscopic Origin
[Image: see text] We have examined the electronic structure evolution in transition metal dichalcogenides MX(2) where M = Mo, W and X = S, Se, and Te. These are generally referred to as van der Waals materials on the one hand, yet one has band gap changes as large as 0.6 eV with thickness in some in...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7331040/ https://www.ncbi.nlm.nih.gov/pubmed/32637790 http://dx.doi.org/10.1021/acsomega.0c01138 |