Evolution of lattice distortions in 4H-SiC wafers with varying doping

Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diameter wafers. The evolution of these LDs were investig...

Descripción completa

Detalles Bibliográficos
Autores principales: Mahadik, Nadeemullah A., Das, Hrishikesh, Stoupin, Stanislav, Stahlbush, Robert E., Bonanno, Peter L., Xu, Xueping, Rengarajan, Varatharajan, Ruland, Gary E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7331604/
https://www.ncbi.nlm.nih.gov/pubmed/32616856
http://dx.doi.org/10.1038/s41598-020-67900-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7331604/
https://www.ncbi.nlm.nih.gov/pubmed/32616856
http://dx.doi.org/10.1038/s41598-020-67900-y

Ejemplares similares