Cargando…

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external st...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Xingchen, Tang, Ning, Zhang, Shixiong, Zhang, Xiaoyue, Guan, Hongming, Zhang, Yunfan, Qian, Xuan, Ji, Yang, Ge, Weikun, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7341096/
https://www.ncbi.nlm.nih.gov/pubmed/32670748
http://dx.doi.org/10.1002/advs.201903400