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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external st...

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Detalles Bibliográficos
Autores principales:	Liu, Xingchen, Tang, Ning, Zhang, Shixiong, Zhang, Xiaoyue, Guan, Hongming, Zhang, Yunfan, Qian, Xuan, Ji, Yang, Ge, Weikun, Shen, Bo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2020
Materias:	Full Papers
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7341096/ https://www.ncbi.nlm.nih.gov/pubmed/32670748 http://dx.doi.org/10.1002/advs.201903400

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