Insulators for 2D nanoelectronics: the gap to bridge

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron...

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Detalles Bibliográficos
Autores principales: Illarionov, Yury Yu., Knobloch, Theresia, Jech, Markus, Lanza, Mario, Akinwande, Deji, Vexler, Mikhail I., Mueller, Thomas, Lemme, Max C., Fiori, Gianluca, Schwierz, Frank, Grasser, Tibor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Review Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7341854/
https://www.ncbi.nlm.nih.gov/pubmed/32636377
http://dx.doi.org/10.1038/s41467-020-16640-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7341854/
https://www.ncbi.nlm.nih.gov/pubmed/32636377
http://dx.doi.org/10.1038/s41467-020-16640-8

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