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Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7341854/ https://www.ncbi.nlm.nih.gov/pubmed/32636377 http://dx.doi.org/10.1038/s41467-020-16640-8 |