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Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to f...

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Detalles Bibliográficos
Autores principales: Lova, Paola, Soci, Cesare
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7344674/
https://www.ncbi.nlm.nih.gov/pubmed/32517034
http://dx.doi.org/10.3390/mi11060573