Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication. Here, we present numerical simulations of p-...

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Detalles Bibliográficos
Autores principales: Ha, Min-Woo, Seok, Ogyun, Lee, Hojun, Lee, Hyun Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7344954/
https://www.ncbi.nlm.nih.gov/pubmed/32570936
http://dx.doi.org/10.3390/mi11060598

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7344954/
https://www.ncbi.nlm.nih.gov/pubmed/32570936
http://dx.doi.org/10.3390/mi11060598

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