Cargando…
Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations
Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with t...
Autores principales: | Wen, Qiuling, Wei, Xinyu, Jiang, Feng, Lu, Jing, Xu, Xipeng |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345114/ https://www.ncbi.nlm.nih.gov/pubmed/32604911 http://dx.doi.org/10.3390/ma13122871 |
Ejemplares similares
-
Dependence of Monocrystalline Sapphire Dicing on Crystal Orientation Using Picosecond Laser Bessel Beams
por: Wen, Qiuling, et al.
Publicado: (2023) -
Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al(2)O(3))
por: Lu, Xizhao, et al.
Publicado: (2017) -
Maskless milling of diamond by a focused oxygen ion beam
por: Martin, Aiden A., et al.
Publicado: (2015) -
ZnO-Based Microcavities Sculpted by Focus Ion Beam Milling
por: Chang, Tsu-Chi, et al.
Publicado: (2016) -
Doping of sapphire single crystals with $^{111}$In and $^{111m}$Cd detected by perturbed angular correlation
por: Habenicht, S, et al.
Publicado: (1999)