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Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer
Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was propos...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345328/ https://www.ncbi.nlm.nih.gov/pubmed/32471163 http://dx.doi.org/10.3390/mi11060544 |
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author | Zhao, Tianchen Deng, Qianfa Zhang, Cheng Feng, Kaiping Zhou, Zhaozhong Yuan, Julong |
author_facet | Zhao, Tianchen Deng, Qianfa Zhang, Cheng Feng, Kaiping Zhou, Zhaozhong Yuan, Julong |
author_sort | Zhao, Tianchen |
collection | PubMed |
description | Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer. |
format | Online Article Text |
id | pubmed-7345328 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-73453282020-07-09 Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer Zhao, Tianchen Deng, Qianfa Zhang, Cheng Feng, Kaiping Zhou, Zhaozhong Yuan, Julong Micromachines (Basel) Article Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer. MDPI 2020-05-27 /pmc/articles/PMC7345328/ /pubmed/32471163 http://dx.doi.org/10.3390/mi11060544 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zhao, Tianchen Deng, Qianfa Zhang, Cheng Feng, Kaiping Zhou, Zhaozhong Yuan, Julong Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title_full | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title_fullStr | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title_full_unstemmed | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title_short | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
title_sort | orthogonal experimental research on dielectrophoresis polishing (depp) of silicon wafer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345328/ https://www.ncbi.nlm.nih.gov/pubmed/32471163 http://dx.doi.org/10.3390/mi11060544 |
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