Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η(5)-C(5)H(4)Se)(2)Zr(η(5)-C(5)H(5))(2)](2)

[Image: see text] Transition metal chalcogenide thin films of the type Fe(x)ZrSe(2) have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe(2) thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η(5)-C(5)H(4)Se)(2)Zr(η(5)-C(5)H(5))(2)](2). Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe(0.14)ZrSe(2) phase, along with secondary phases of FeSe and ZrO(2). Upon intercalation, a small optical band gap enhancement (E(g(direct))(opt) = 1.72 eV) is detected in comparison with that of the host material.