Low Resistance TiO(2)/p-Si Heterojunction for Tandem Solar Cells

Niobium-doped titanium dioxide (Ti(1−x)Nb(x)O(2)) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystalli...

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Detalles Bibliográficos
Autores principales: Ašmontas, Steponas, Anbinderis, Maksimas, Gradauskas, Jonas, Juškėnas, Remigijus, Leinartas, Konstantinas, Lučun, Andžej, Selskis, Algirdas, Staišiūnas, Laurynas, Stanionytė, Sandra, Sužiedėlis, Algirdas, Šilėnas, Aldis, Širmulis, Edmundas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345728/
https://www.ncbi.nlm.nih.gov/pubmed/32630580
http://dx.doi.org/10.3390/ma13122857

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7345728/
https://www.ncbi.nlm.nih.gov/pubmed/32630580
http://dx.doi.org/10.3390/ma13122857

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