Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)

We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxyg...

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Detalles Bibliográficos
Autores principales: Kim, Taeyoon, Son, Heerak, Kim, Inho, Kim, Jaewook, Lee, Suyoun, Park, Jong Keuk, Kwak, Joon Young, Park, Jongkil, Jeong, YeonJoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347604/
https://www.ncbi.nlm.nih.gov/pubmed/32647262
http://dx.doi.org/10.1038/s41598-020-68211-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347604/
https://www.ncbi.nlm.nih.gov/pubmed/32647262
http://dx.doi.org/10.1038/s41598-020-68211-y

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