Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)

We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxyg...

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Autores principales: Kim, Taeyoon, Son, Heerak, Kim, Inho, Kim, Jaewook, Lee, Suyoun, Park, Jong Keuk, Kwak, Joon Young, Park, Jongkil, Jeong, YeonJoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347604/
https://www.ncbi.nlm.nih.gov/pubmed/32647262
http://dx.doi.org/10.1038/s41598-020-68211-y
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author Kim, Taeyoon
Son, Heerak
Kim, Inho
Kim, Jaewook
Lee, Suyoun
Park, Jong Keuk
Kwak, Joon Young
Park, Jongkil
Jeong, YeonJoo
author_facet Kim, Taeyoon
Son, Heerak
Kim, Inho
Kim, Jaewook
Lee, Suyoun
Park, Jong Keuk
Kwak, Joon Young
Park, Jongkil
Jeong, YeonJoo
author_sort Kim, Taeyoon
collection PubMed
description We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.
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spelling pubmed-73476042020-07-10 Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM) Kim, Taeyoon Son, Heerak Kim, Inho Kim, Jaewook Lee, Suyoun Park, Jong Keuk Kwak, Joon Young Park, Jongkil Jeong, YeonJoo Sci Rep Article We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior. Nature Publishing Group UK 2020-07-09 /pmc/articles/PMC7347604/ /pubmed/32647262 http://dx.doi.org/10.1038/s41598-020-68211-y Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kim, Taeyoon
Son, Heerak
Kim, Inho
Kim, Jaewook
Lee, Suyoun
Park, Jong Keuk
Kwak, Joon Young
Park, Jongkil
Jeong, YeonJoo
Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title_full Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title_fullStr Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title_full_unstemmed Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title_short Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)
title_sort reversible switching mode change in ta(2)o(5)-based resistive switching memory (reram)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347604/
https://www.ncbi.nlm.nih.gov/pubmed/32647262
http://dx.doi.org/10.1038/s41598-020-68211-y
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