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Strain-induced topological phase transition with inversion of the in-plane electric polarization in tiny-gap semiconductor SiGe monolayer
Our density functional theory calculations show that tiny-gap semiconductor SiGe monolayer is a quantum valley Hall insulator with a spontaneous electric polarization and, under a small biaxial strain, undergoes a topological phase transition between the states with opposite valley Chern numbers. Th...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347862/ https://www.ncbi.nlm.nih.gov/pubmed/32647295 http://dx.doi.org/10.1038/s41598-020-68228-3 |