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Strain-induced topological phase transition with inversion of the in-plane electric polarization in tiny-gap semiconductor SiGe monolayer

Our density functional theory calculations show that tiny-gap semiconductor SiGe monolayer is a quantum valley Hall insulator with a spontaneous electric polarization and, under a small biaxial strain, undergoes a topological phase transition between the states with opposite valley Chern numbers. Th...

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Detalles Bibliográficos
Autores principales: Lee, Kyu Won, Lee, Cheol Eui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7347862/
https://www.ncbi.nlm.nih.gov/pubmed/32647295
http://dx.doi.org/10.1038/s41598-020-68228-3

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