Spatial defects nanoengineering for bipolar conductivity in MoS(2)

Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithogra...

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Detalles Bibliográficos
Autores principales: Zheng, Xiaorui, Calò, Annalisa, Cao, Tengfei, Liu, Xiangyu, Huang, Zhujun, Das, Paul Masih, Drndic, Marija, Albisetti, Edoardo, Lavini, Francesco, Li, Tai-De, Narang, Vishal, King, William P., Harrold, John W., Vittadello, Michele, Aruta, Carmela, Shahrjerdi, Davood, Riedo, Elisa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7351723/
https://www.ncbi.nlm.nih.gov/pubmed/32651374
http://dx.doi.org/10.1038/s41467-020-17241-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7351723/
https://www.ncbi.nlm.nih.gov/pubmed/32651374
http://dx.doi.org/10.1038/s41467-020-17241-1

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