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Spatial defects nanoengineering for bipolar conductivity in MoS(2)
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithogra...
Autores principales: | , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7351723/ https://www.ncbi.nlm.nih.gov/pubmed/32651374 http://dx.doi.org/10.1038/s41467-020-17241-1 |
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author | Zheng, Xiaorui Calò, Annalisa Cao, Tengfei Liu, Xiangyu Huang, Zhujun Das, Paul Masih Drndic, Marija Albisetti, Edoardo Lavini, Francesco Li, Tai-De Narang, Vishal King, William P. Harrold, John W. Vittadello, Michele Aruta, Carmela Shahrjerdi, Davood Riedo, Elisa |
author_facet | Zheng, Xiaorui Calò, Annalisa Cao, Tengfei Liu, Xiangyu Huang, Zhujun Das, Paul Masih Drndic, Marija Albisetti, Edoardo Lavini, Francesco Li, Tai-De Narang, Vishal King, William P. Harrold, John W. Vittadello, Michele Aruta, Carmela Shahrjerdi, Davood Riedo, Elisa |
author_sort | Zheng, Xiaorui |
collection | PubMed |
description | Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS(2). The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10(4). Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H(2)O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS(2) in N(2) produces n-character. |
format | Online Article Text |
id | pubmed-7351723 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-73517232020-07-13 Spatial defects nanoengineering for bipolar conductivity in MoS(2) Zheng, Xiaorui Calò, Annalisa Cao, Tengfei Liu, Xiangyu Huang, Zhujun Das, Paul Masih Drndic, Marija Albisetti, Edoardo Lavini, Francesco Li, Tai-De Narang, Vishal King, William P. Harrold, John W. Vittadello, Michele Aruta, Carmela Shahrjerdi, Davood Riedo, Elisa Nat Commun Article Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS(2). The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10(4). Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H(2)O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS(2) in N(2) produces n-character. Nature Publishing Group UK 2020-07-10 /pmc/articles/PMC7351723/ /pubmed/32651374 http://dx.doi.org/10.1038/s41467-020-17241-1 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Zheng, Xiaorui Calò, Annalisa Cao, Tengfei Liu, Xiangyu Huang, Zhujun Das, Paul Masih Drndic, Marija Albisetti, Edoardo Lavini, Francesco Li, Tai-De Narang, Vishal King, William P. Harrold, John W. Vittadello, Michele Aruta, Carmela Shahrjerdi, Davood Riedo, Elisa Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title | Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title_full | Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title_fullStr | Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title_full_unstemmed | Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title_short | Spatial defects nanoengineering for bipolar conductivity in MoS(2) |
title_sort | spatial defects nanoengineering for bipolar conductivity in mos(2) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7351723/ https://www.ncbi.nlm.nih.gov/pubmed/32651374 http://dx.doi.org/10.1038/s41467-020-17241-1 |
work_keys_str_mv | AT zhengxiaorui spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT caloannalisa spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT caotengfei spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT liuxiangyu spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT huangzhujun spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT daspaulmasih spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT drndicmarija spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT albisettiedoardo spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT lavinifrancesco spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT litaide spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT narangvishal spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT kingwilliamp spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT harroldjohnw spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT vittadellomichele spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT arutacarmela spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT shahrjerdidavood spatialdefectsnanoengineeringforbipolarconductivityinmos2 AT riedoelisa spatialdefectsnanoengineeringforbipolarconductivityinmos2 |