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Spatial defects nanoengineering for bipolar conductivity in MoS(2)
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithogra...
Autores principales: | Zheng, Xiaorui, Calò, Annalisa, Cao, Tengfei, Liu, Xiangyu, Huang, Zhujun, Das, Paul Masih, Drndic, Marija, Albisetti, Edoardo, Lavini, Francesco, Li, Tai-De, Narang, Vishal, King, William P., Harrold, John W., Vittadello, Michele, Aruta, Carmela, Shahrjerdi, Davood, Riedo, Elisa |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7351723/ https://www.ncbi.nlm.nih.gov/pubmed/32651374 http://dx.doi.org/10.1038/s41467-020-17241-1 |
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