Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO(2) Buffer Layer

We report the performance improvement of low-temperature coplanar indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs) with a maximum process temperature of 230 °C. We treated F plasma on the surface of an SiO(2) buffer layer before depositing the IGZO semiconductor by reactive sputtering....

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Detalles Bibliográficos
Autores principales: Jeong, Ho-young, Nam, Seung-hee, Park, Kwon-shik, Yoon, Soo-young, Park, Chanju, Jang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353212/
https://www.ncbi.nlm.nih.gov/pubmed/32549245
http://dx.doi.org/10.3390/nano10061165

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353212/
https://www.ncbi.nlm.nih.gov/pubmed/32549245
http://dx.doi.org/10.3390/nano10061165

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