Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA(0.75)MA(0.25))(1-x)Cs(x)PbI(3) (x = 0–0.1) is demonstrated to exhibit bipolar resistive...

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Detalles Bibliográficos
Autores principales: Hsiao, Yuan-Wen, Wang, Shi-Yu, Huang, Cheng-Liang, Leu, Ching-Chich, Shih, Chuan-Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353342/
https://www.ncbi.nlm.nih.gov/pubmed/32545543
http://dx.doi.org/10.3390/nano10061155

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7353342/
https://www.ncbi.nlm.nih.gov/pubmed/32545543
http://dx.doi.org/10.3390/nano10061155

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