Bond-breaking induced Lifshitz transition in robust Dirac semimetal VAI(3)

Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper, we report that the type-II Dirac semimetal [Formula: see text] hosts exceptional, robust topological electron...

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Detalles Bibliográficos
Autores principales: Liu, Yiyuan, Liu, Yu-Fei, Gui, Xin, Xiang, Cheng, Zhou, Hui-Bin, Hsu, Chuang-Han, Lin, Hsin, Chang, Tay-Rong, Xie, Weiwei, Jia, Shuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2020
Materias:
Physical Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7355027/
https://www.ncbi.nlm.nih.gov/pubmed/32554603
http://dx.doi.org/10.1073/pnas.1917697117

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7355027/
https://www.ncbi.nlm.nih.gov/pubmed/32554603
http://dx.doi.org/10.1073/pnas.1917697117

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