Ferroelectric Domain Wall Memristor

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current...

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Detalles Bibliográficos
Autores principales: McConville, James P. V., Lu, Haidong, Wang, Bo, Tan, Yueze, Cochard, Charlotte, Conroy, Michele, Moore, Kalani, Harvey, Alan, Bangert, Ursel, Chen, Long‐Qing, Gruverman, Alexei, Gregg, J. Marty
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7357591/
https://www.ncbi.nlm.nih.gov/pubmed/32684905
http://dx.doi.org/10.1002/adfm.202000109

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7357591/
https://www.ncbi.nlm.nih.gov/pubmed/32684905
http://dx.doi.org/10.1002/adfm.202000109

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